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ipp60r099p6xksa1 Infineon CoolMOS P6 Type N-Channel MOSFET, 37.9 A, 650 V Enhancement, 4-Pin TO-220 IPP60R099P6XKSA1
ipp60r099p6xksa1 Infineon CoolMOS P6 Type N-Channel MOSFET, 37.9 A, 650 V Enhancement, 4-Pin TO-220 IPP60R099P6XKSA1
ipp60r099p6xksa1 Infineon CoolMOS P6 Type N-Channel MOSFET, 37.9 A, 650 V Enhancement, 4-Pin TO-220 IPP60R099P6XKSA1

Infineon CoolMOS P6 Type N-Channel MOSFET, 37.9 A, 650 V Enhancement, 4-Pin TO-220 IPP60R099P6XKSA1

Infineon CoolMOS P6 Type N-Channel MOSFET, 37.9 A, 650 V Enhancement, 4-Pin TO-220 IPP60R099P6XKSA1

Manufacturer:
Infineon
Manufacturer Part No:
IPP60R099P6XKSA1
Enrgtech Part No:
ET100222547
Warranty:
Manufacturer
SAR 2.64 SAR 2.64
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
37.9A
Maximum Drain Source Voltage Vds:
650V
Series:
CoolMOS P6
Package Type:
TO-220
Mount Type:
Through Hole
Pin Count:
4
Maximum Drain Source Resistance Rds:
99mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
278W
Typical Gate Charge Qg @ Vgs:
70nC
Maximum Gate Source Voltage Vgs:
30 V
Forward Voltage Vf:
0.9V
Maximum Operating Temperature:
150°C
Height:
15.95mm
Length:
10.36mm
Standards/Approvals:
No
Width:
4.57 mm
Automotive Standard:
No
pdf icon
0900766b81560dc7.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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