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ipp055n03lgxksa1 Infineon OptiMOS 3 Type N-Channel Power Transistor, 50 A, 30 V Enhancement, 3-Pin TO-220 IPP055N03LGXKSA1
ipp055n03lgxksa1 Infineon OptiMOS 3 Type N-Channel Power Transistor, 50 A, 30 V Enhancement, 3-Pin TO-220 IPP055N03LGXKSA1
ipp055n03lgxksa1 Infineon OptiMOS 3 Type N-Channel Power Transistor, 50 A, 30 V Enhancement, 3-Pin TO-220 IPP055N03LGXKSA1
ipp055n03lgxksa1 Infineon OptiMOS 3 Type N-Channel Power Transistor, 50 A, 30 V Enhancement, 3-Pin TO-220 IPP055N03LGXKSA1

Infineon OptiMOS 3 Type N-Channel Power Transistor, 50 A, 30 V Enhancement, 3-Pin TO-220 IPP055N03LGXKSA1

Infineon OptiMOS 3 Type N-Channel Power Transistor, 50 A, 30 V Enhancement, 3-Pin TO-220 IPP055N03LGXKSA1

Manufacturer:
Infineon
Manufacturer Part No:
IPP055N03LGXKSA1
Enrgtech Part No:
ET100222544
Warranty:
Manufacturer
SAR 0.86 SAR 0.86
Checking for live stock
Channel Type:
Type N
Product Type:
1 x 1 x 0.38mm
Maximum Continuous Drain Current Id:
50A
Maximum Drain Source Voltage Vds:
30V
Package Type:
TO-220
Series:
OptiMOS 3
Mount Type:
Surface, Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
5.5mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
±20 V
Maximum Power Dissipation Pd:
68W
Forward Voltage Vf:
1.1V
Typical Gate Charge Qg @ Vgs:
31nC
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
175°C
Height:
15.95mm
Standards/Approvals:
IEC61249-2-21, JEDEC (J-STD20,JESD22), RoHS
Width:
4.57 mm
Length:
10.36mm
Automotive Standard:
No
pdf icon
0900766b81560ce3.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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