irf135s203 Infineon HEXFET Type N-Channel MOSFET, 129 A, 135 V Enhancement, 3-Pin TO-263 IRF135S203

Infineon HEXFET Type N-Channel MOSFET, 129 A, 135 V Enhancement, 3-Pin TO-263 IRF135S203

For more information please check the datasheets.

Infineon HEXFET Type N-Channel MOSFET, 129 A, 135 V Enhancement, 3-Pin TO-263 IRF135S203

Manufacturer:

Infineon

Manufacturer Part No:

IRF135S203

Enrgtech Part No:

ET100222520

Warranty:

Manufacturer

SAR 2.02

Checking for live stock

Product Type:

MOSFET

Channel Type:

Type N

Maximum Continuous Drain Current Id:

129A

Maximum Drain Source Voltage Vds:

135V

Series:

HEXFET

Package Type:

TO-263

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

8.4mΩ

Channel Mode:

Enhancement

Typical Gate Charge Qg @ Vgs:

180nC

Maximum Power Dissipation Pd:

441W

0900766b81560cbe.pdf(datasheets)

0900766b81644fb2.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon HEXFET Type N-Channel MOSFET, 129 A, 135 V Enhancement, 3-Pin TO-263 IRF135S203

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