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ipd80r1k4p7atma1 Infineon CoolMOS P7 Type N-Channel MOSFET, 4 A, 800 V Enhancement, 3-Pin TO-252 IPD80R1K4P7ATMA1
ipd80r1k4p7atma1 Infineon CoolMOS P7 Type N-Channel MOSFET, 4 A, 800 V Enhancement, 3-Pin TO-252 IPD80R1K4P7ATMA1
ipd80r1k4p7atma1 Infineon CoolMOS P7 Type N-Channel MOSFET, 4 A, 800 V Enhancement, 3-Pin TO-252 IPD80R1K4P7ATMA1

Infineon CoolMOS P7 Type N-Channel MOSFET, 4 A, 800 V Enhancement, 3-Pin TO-252 IPD80R1K4P7ATMA1

Infineon CoolMOS P7 Type N-Channel MOSFET, 4 A, 800 V Enhancement, 3-Pin TO-252 IPD80R1K4P7ATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPD80R1K4P7ATMA1
Enrgtech Part No:
ET100222506
Warranty:
Manufacturer
SAR 0.37 SAR 0.37
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
4A
Maximum Drain Source Voltage Vds:
800V
Series:
CoolMOS P7
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
1.4Ω
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
0.9V
Maximum Power Dissipation Pd:
32W
Maximum Gate Source Voltage Vgs:
30 V
Typical Gate Charge Qg @ Vgs:
WR-MPC3
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Width:
6.22 mm
Height:
2.41mm
Length:
6.73mm
Automotive Standard:
No
pdf icon
0900766b81560de6.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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