Enrgtech
Enrgtech

Deliver to

Saudi Arabia

Categories
Brands
Part Numbers
Top Products
Register
0
You have 0 item in your basket
VIEW BASKET CHECK OUT
ipn50r1k4ceatma1 Infineon CoolMOS CE Type N-Channel MOSFET, 4.8 A, 550 V Enhancement, 4-Pin SOT-223 IPN50R1K4CEATMA1
ipn50r1k4ceatma1 Infineon CoolMOS CE Type N-Channel MOSFET, 4.8 A, 550 V Enhancement, 4-Pin SOT-223 IPN50R1K4CEATMA1
ipn50r1k4ceatma1 Infineon CoolMOS CE Type N-Channel MOSFET, 4.8 A, 550 V Enhancement, 4-Pin SOT-223 IPN50R1K4CEATMA1

Infineon CoolMOS CE Type N-Channel MOSFET, 4.8 A, 550 V Enhancement, 4-Pin SOT-223 IPN50R1K4CEATMA1

Infineon CoolMOS CE Type N-Channel MOSFET, 4.8 A, 550 V Enhancement, 4-Pin SOT-223 IPN50R1K4CEATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPN50R1K4CEATMA1
Enrgtech Part No:
ET100222496
Warranty:
Manufacturer
SAR 0.27 SAR 0.27
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
4.8A
Maximum Drain Source Voltage Vds:
550V
Package Type:
SOT-223
Series:
CoolMOS CE
Mount Type:
Surface
Pin Count:
4
Maximum Drain Source Resistance Rds:
1.4Ω
Channel Mode:
Enhancement
Forward Voltage Vf:
2 x 2 x 0.5mm
Minimum Operating Temperature:
-40°C
Typical Gate Charge Qg @ Vgs:
8.2nC
Maximum Power Dissipation Pd:
5W
Maximum Gate Source Voltage Vgs:
30 V
Maximum Operating Temperature:
150°C
Height:
1.7mm
Length:
6.7mm
Standards/Approvals:
No
Width:
3.7 mm
Automotive Standard:
No
pdf icon
0900766b81560d92.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
Product Reviews