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irfs3006trl7pp Infineon HEXFET Type N-Channel MOSFET, 293 A, 60 V Enhancement, 8-Pin TO-263 IRFS3006TRL7PP
irfs3006trl7pp Infineon HEXFET Type N-Channel MOSFET, 293 A, 60 V Enhancement, 8-Pin TO-263 IRFS3006TRL7PP
irfs3006trl7pp Infineon HEXFET Type N-Channel MOSFET, 293 A, 60 V Enhancement, 8-Pin TO-263 IRFS3006TRL7PP

Infineon HEXFET Type N-Channel MOSFET, 293 A, 60 V Enhancement, 8-Pin TO-263 IRFS3006TRL7PP

Infineon HEXFET Type N-Channel MOSFET, 293 A, 60 V Enhancement, 8-Pin TO-263 IRFS3006TRL7PP

Manufacturer:
Infineon
Manufacturer Part No:
IRFS3006TRL7PP
Enrgtech Part No:
ET100222149
Warranty:
Manufacturer
SAR 2.39 SAR 2.39
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
293A
Maximum Drain Source Voltage Vds:
60V
Series:
HEXFET
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
2.1mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.3V
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
375W
Typical Gate Charge Qg @ Vgs:
200nC
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
175°C
Width:
EH Connector Housing
Length:
10.67mm
Height:
9.65mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
0900766b81560d30.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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