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irfs4010trlpbf Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-263 IRFS4010TRLPBF
irfs4010trlpbf Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-263 IRFS4010TRLPBF
irfs4010trlpbf Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-263 IRFS4010TRLPBF

Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-263 IRFS4010TRLPBF

Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-263 IRFS4010TRLPBF

Manufacturer:
Infineon
Manufacturer Part No:
IRFS4010TRLPBF
Enrgtech Part No:
ET100222145
Warranty:
Manufacturer
SAR 2.69 SAR 2.69
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
180A
Maximum Drain Source Voltage Vds:
100V
Package Type:
TO-263
Series:
HEXFET
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
4.7mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
143nC
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
375W
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
175°C
Height:
4.83mm
Width:
9.65 mm
Standards/Approvals:
No
Length:
10.67mm
Automotive Standard:
No
pdf icon
0900766b81560d6e.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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