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irfs4010trl7pp Infineon HEXFET Type N-Channel MOSFET, 190 A, 100 V Enhancement, 8-Pin TO-263 IRFS4010TRL7PP
irfs4010trl7pp Infineon HEXFET Type N-Channel MOSFET, 190 A, 100 V Enhancement, 8-Pin TO-263 IRFS4010TRL7PP
irfs4010trl7pp Infineon HEXFET Type N-Channel MOSFET, 190 A, 100 V Enhancement, 8-Pin TO-263 IRFS4010TRL7PP

Infineon HEXFET Type N-Channel MOSFET, 190 A, 100 V Enhancement, 8-Pin TO-263 IRFS4010TRL7PP

Infineon HEXFET Type N-Channel MOSFET, 190 A, 100 V Enhancement, 8-Pin TO-263 IRFS4010TRL7PP

Manufacturer:
Infineon
Manufacturer Part No:
IRFS4010TRL7PP
Enrgtech Part No:
ET100222143
Warranty:
Manufacturer
SAR 3.47 SAR 3.47
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
190A
Maximum Drain Source Voltage Vds:
100V
Series:
HEXFET
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
4mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.3V
Typical Gate Charge Qg @ Vgs:
150nC
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
380W
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
175°C
Length:
10.67mm
Standards/Approvals:
No
Width:
9.65 mm
Height:
4.83mm
Automotive Standard:
No
pdf icon
0900766b81560d6c.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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