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irfs3307ztrlpbf Infineon HEXFET Type N-Channel MOSFET, 128 A, 75 V Enhancement, 3-Pin TO-263 IRFS3307ZTRLPBF
irfs3307ztrlpbf Infineon HEXFET Type N-Channel MOSFET, 128 A, 75 V Enhancement, 3-Pin TO-263 IRFS3307ZTRLPBF
irfs3307ztrlpbf Infineon HEXFET Type N-Channel MOSFET, 128 A, 75 V Enhancement, 3-Pin TO-263 IRFS3307ZTRLPBF

Infineon HEXFET Type N-Channel MOSFET, 128 A, 75 V Enhancement, 3-Pin TO-263 IRFS3307ZTRLPBF

Infineon HEXFET Type N-Channel MOSFET, 128 A, 75 V Enhancement, 3-Pin TO-263 IRFS3307ZTRLPBF

Manufacturer:
Infineon
Manufacturer Part No:
IRFS3307ZTRLPBF
Enrgtech Part No:
ET100222141
Warranty:
Manufacturer
SAR 3.11 SAR 3.11
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
128A
Maximum Drain Source Voltage Vds:
75V
Series:
HEXFET
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
5.8mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
79nC
Maximum Power Dissipation Pd:
230W
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
175°C
Length:
10.67mm
Standards/Approvals:
No
Width:
9.65 mm
Height:
4.83mm
Automotive Standard:
No
pdf icon
0900766b81560d6a.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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