onsemi QFET Type N-Channel MOSFET, 1.7 A, 100 V Enhancement, 4-Pin SOT-223 FQT7N10LTF

onsemi QFET Type N-Channel MOSFET, 1.7 A, 100 V Enhancement, 4-Pin SOT-223 FQT7N10LTF

Manufacturer:
Manufacturer Part No:
FQT7N10LTF
Enrgtech Part No:
ET100219702
Warranty:
Manufacturer
SAR 0.69 SAR 0.69
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
16mΩ
Maximum Drain Source Voltage Vds:
100V
Package Type:
SOT-223
Series:
QFET
Mount Type:
Surface
Pin Count:
4
Maximum Drain Source Resistance Rds:
350mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
2W
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
4.6nC
Forward Voltage Vf:
1.5V
Maximum Operating Temperature:
150°C
Height:
1.6mm
Standards/Approvals:
No
Width:
3.56 mm
Length:
6.5mm
Automotive Standard:
No
pdf icon
0900766b80d25b03.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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