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imzc120r026m2hxksa1 Infineon IMZC120 Type N-Channel MOSFET, 49 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R026M2HXKSA1
imzc120r026m2hxksa1 Infineon IMZC120 Type N-Channel MOSFET, 49 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R026M2HXKSA1

Infineon IMZC120 Type N-Channel MOSFET, 49 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R026M2HXKSA1

Infineon IMZC120 Type N-Channel MOSFET, 49 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R026M2HXKSA1

Manufacturer:
Infineon
Manufacturer Part No:
IMZC120R026M2HXKSA1
Enrgtech Part No:
ET100219442
Warranty:
Manufacturer
SAR 13.32 SAR 13.32
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
49A
Maximum Drain Source Voltage Vds:
1200V
Series:
IMZC120
Package Type:
PG-TO-247-4-U07
Mount Type:
Through Hole
Pin Count:
4
Maximum Drain Source Resistance Rds:
69mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
5.5V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
60nC
Maximum Power Dissipation Pd:
289W
Maximum Gate Source Voltage Vgs:
25 V
Maximum Operating Temperature:
200°C
Length:
23.5mm
Width:
16 mm
Standards/Approvals:
JEDEC47/20/22
Automotive Standard:
No
pdf icon
A700000013462230.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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