Infineon F3L6MR Type N-Channel MOSFET, 375 A, 2000 V Enhancement AG-EASY2B F3L6MR20W2M1HB70BPSA1

For more information please check the datasheets.

Infineon F3L6MR Type N-Channel MOSFET, 375 A, 2000 V Enhancement AG-EASY2B F3L6MR20W2M1HB70BPSA1

Manufacturer:

Infineon

Manufacturer Part No:

F3L6MR20W2M1HB70BPSA1

Enrgtech Part No:

ET100219427

Warranty:

Manufacturer

SAR 449.37

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Channel Type:

Type N

Product Type:

MOSFET

Maximum Continuous Drain Current Id:

375A

Maximum Drain Source Voltage Vds:

2000V

Series:

F3L6MR

Package Type:

AG-EASY2B

Mount Type:

Through Hole

Maximum Drain Source Resistance Rds:

7.8mΩ

Channel Mode:

Enhancement

Minimum Operating Temperature:

-40°C

Maximum Power Dissipation Pd:

20mW

Maximum Gate Source Voltage Vgs:

20 V

A700000013461438.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon F3L6MR Type N-Channel MOSFET, 375 A, 2000 V Enhancement AG-EASY2B F3L6MR20W2M1HB70BPSA1

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