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ipt017n10nm5lf2atma1 Infineon IPT0 Type N-Channel MOSFET, 321 A, 100 V Enhancement, 8-Pin PG-HSOF-8 IPT017N10NM5LF2ATMA1
ipt017n10nm5lf2atma1 Infineon IPT0 Type N-Channel MOSFET, 321 A, 100 V Enhancement, 8-Pin PG-HSOF-8 IPT017N10NM5LF2ATMA1

Infineon IPT0 Type N-Channel MOSFET, 321 A, 100 V Enhancement, 8-Pin PG-HSOF-8 IPT017N10NM5LF2ATMA1

Infineon IPT0 Type N-Channel MOSFET, 321 A, 100 V Enhancement, 8-Pin PG-HSOF-8 IPT017N10NM5LF2ATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPT017N10NM5LF2ATMA1
Enrgtech Part No:
ET100219417
Warranty:
Manufacturer
SAR 4.61 SAR 4.61
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
321A
Maximum Drain Source Voltage Vds:
100V
Package Type:
PG-HSOF-8
Series:
IPT0
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
1.7mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
375W
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
165nC
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
175°C
Height:
1.30mm
Length:
10.58mm
Standards/Approvals:
Halogen-Free (IEC61249-2-21), RoHS, JEDEC
Width:
10.1 mm
Automotive Standard:
No
pdf icon
A700000013462636.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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