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iqd020n10nm5cgscatma1 Infineon IQD0 Type N-Channel MOSFET, 276 A, 100 V Enhancement, 9-Pin PG-WHTFN-9 IQD020N10NM5CGSCATMA1
iqd020n10nm5cgscatma1 Infineon IQD0 Type N-Channel MOSFET, 276 A, 100 V Enhancement, 9-Pin PG-WHTFN-9 IQD020N10NM5CGSCATMA1

Infineon IQD0 Type N-Channel MOSFET, 276 A, 100 V Enhancement, 9-Pin PG-WHTFN-9 IQD020N10NM5CGSCATMA1

Infineon IQD0 Type N-Channel MOSFET, 276 A, 100 V Enhancement, 9-Pin PG-WHTFN-9 IQD020N10NM5CGSCATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IQD020N10NM5CGSCATMA1
Enrgtech Part No:
ET100219416
Warranty:
Manufacturer
SAR 4.17 SAR 4.17
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
276A
Maximum Drain Source Voltage Vds:
100V
Package Type:
PG-WHTFN-9
Series:
IQD0
Mount Type:
Surface
Pin Count:
9
Maximum Drain Source Resistance Rds:
2.05mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
107nC
Maximum Power Dissipation Pd:
333W
Forward Voltage Vf:
1V
Maximum Gate Source Voltage Vgs:
±20 V
Maximum Operating Temperature:
175°C
Length:
5mm
Height:
0.75mm
Standards/Approvals:
RoHS, Halogen-Free According to IEC61249-2-21, JEDEC Qualified
Width:
6 mm
Automotive Standard:
No
pdf icon
A700000013462676.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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