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bsc019n04nsgatma1 Infineon OptiMOS 3 Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin TDSON BSC019N04NSGATMA1
bsc019n04nsgatma1 Infineon OptiMOS 3 Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin TDSON BSC019N04NSGATMA1
bsc019n04nsgatma1 Infineon OptiMOS 3 Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin TDSON BSC019N04NSGATMA1

Infineon OptiMOS 3 Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin TDSON BSC019N04NSGATMA1

Infineon OptiMOS 3 Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin TDSON BSC019N04NSGATMA1

Manufacturer:
Infineon
Manufacturer Part No:
BSC019N04NSGATMA1
Enrgtech Part No:
ET100214167
Warranty:
Manufacturer
SAR 0.80 SAR 0.80
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
100A
Maximum Drain Source Voltage Vds:
40V
Series:
OptiMOS 3
Package Type:
TDSON
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
1.9mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
81nC
Forward Voltage Vf:
0.85V
Maximum Power Dissipation Pd:
125W
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Length:
6.35mm
Height:
1.1mm
Width:
5.35 mm
Automotive Standard:
No
pdf icon
0900766b814ae6da.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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