irlb8314pbf Infineon HEXFET Type N-Channel MOSFET, 171 A, 30 V Enhancement, 3-Pin TO-220 IRLB8314PBF

Infineon HEXFET Type N-Channel MOSFET, 171 A, 30 V Enhancement, 3-Pin TO-220 IRLB8314PBF

For more information please check the datasheets.

Infineon HEXFET Type N-Channel MOSFET, 171 A, 30 V Enhancement, 3-Pin TO-220 IRLB8314PBF

Manufacturer:

Infineon

Manufacturer Part No:

IRLB8314PBF

Enrgtech Part No:

ET100212854

Warranty:

Manufacturer

SAR 0.48

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Product Type:

MOSFET

Channel Type:

Type N

Maximum Continuous Drain Current Id:

171A

Maximum Drain Source Voltage Vds:

30V

Series:

HEXFET

Package Type:

TO-220

Mount Type:

Through Hole

Pin Count:

Maximum Drain Source Resistance Rds:

3.2mΩ

Channel Mode:

Enhancement

Minimum Operating Temperature:

-55°C

Maximum Power Dissipation Pd:

125W

0900766b81560d00.pdf(datasheets)

0900766b81644fb2.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon HEXFET Type N-Channel MOSFET, 171 A, 30 V Enhancement, 3-Pin TO-220 IRLB8314PBF

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