Infineon HEXFET Type N-Channel MOSFET, 300 A, 60 V Enhancement, 8-Pin TO-263 IRLS3036TRL7PP

Infineon HEXFET Type N-Channel MOSFET, 300 A, 60 V Enhancement, 8-Pin TO-263 IRLS3036TRL7PP

Manufacturer:
Manufacturer Part No:
IRLS3036TRL7PP
Enrgtech Part No:
ET100212843
Warranty:
Manufacturer
SAR 3.42 SAR 3.42
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
300A
Maximum Drain Source Voltage Vds:
60V
Package Type:
TO-263
Series:
HEXFET
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
2.2mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
380
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.3V
Maximum Gate Source Voltage Vgs:
16 V
Maximum Power Dissipation Pd:
380W
Maximum Operating Temperature:
175°C
Standards/Approvals:
No
Length:
10.67mm
Width:
EH Connector Housing
Height:
9.65mm
Automotive Standard:
No
pdf icon
0900766b81560d45.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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