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irls3036trlpbf Infineon HEXFET Type N-Channel MOSFET, 270 A, 60 V Enhancement, 3-Pin TO-263 IRLS3036TRLPBF
irls3036trlpbf Infineon HEXFET Type N-Channel MOSFET, 270 A, 60 V Enhancement, 3-Pin TO-263 IRLS3036TRLPBF
irls3036trlpbf Infineon HEXFET Type N-Channel MOSFET, 270 A, 60 V Enhancement, 3-Pin TO-263 IRLS3036TRLPBF

Infineon HEXFET Type N-Channel MOSFET, 270 A, 60 V Enhancement, 3-Pin TO-263 IRLS3036TRLPBF

Infineon HEXFET Type N-Channel MOSFET, 270 A, 60 V Enhancement, 3-Pin TO-263 IRLS3036TRLPBF

Manufacturer:
Infineon
Manufacturer Part No:
IRLS3036TRLPBF
Enrgtech Part No:
ET100212841
Warranty:
Manufacturer
SAR 2.47 SAR 2.47
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
270A
Maximum Drain Source Voltage Vds:
60V
Series:
HEXFET
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
2.8mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
380W
Forward Voltage Vf:
1.3V
Typical Gate Charge Qg @ Vgs:
PH Series Dis-Connectable Crimp Style Connector
Maximum Gate Source Voltage Vgs:
16 V
Maximum Operating Temperature:
175°C
Height:
9.65mm
Standards/Approvals:
No
Width:
EH Connector Housing
Length:
10.67mm
Automotive Standard:
No
pdf icon
0900766b81560d47.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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