Infineon HEXFET Type N-Channel MOSFET, 61 A, 100 V Enhancement, 3-Pin TO-263 IRFS4510TRLPBF

Infineon HEXFET Type N-Channel MOSFET, 61 A, 100 V Enhancement, 3-Pin TO-263 IRFS4510TRLPBF

Manufacturer:
Manufacturer Part No:
IRFS4510TRLPBF
Enrgtech Part No:
ET100212815
Warranty:
Manufacturer
SAR 2.27 SAR 2.27
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
61A
Maximum Drain Source Voltage Vds:
100V
Series:
HEXFET
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
13.9mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
20 pcs
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
140W
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
175°C
Standards/Approvals:
No
Height:
4.83mm
Length:
10.67mm
Width:
9.65 mm
Automotive Standard:
No
pdf icon
0900766b81560d70.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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