Infineon HEXFET Type N-Channel MOSFET, 246 A, 75 V Enhancement, 3-Pin TO-263 IRFS7730TRLPBF

Infineon HEXFET Type N-Channel MOSFET, 246 A, 75 V Enhancement, 3-Pin TO-263 IRFS7730TRLPBF

Manufacturer:
Manufacturer Part No:
IRFS7730TRLPBF
Enrgtech Part No:
ET100212805
Warranty:
Manufacturer
SAR 2.42 SAR 2.42
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
246A
Maximum Drain Source Voltage Vds:
75V
Package Type:
TO-263
Series:
HEXFET
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
2.6mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
271nC
Forward Voltage Vf:
1.2V
Maximum Power Dissipation Pd:
375W
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
175°C
Width:
9.65 mm
Height:
4.83mm
Length:
10.67mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
0900766b81560d72.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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