Enrgtech
Enrgtech

Deliver to

Saudi Arabia

Categories
Brands
Part Numbers
Top Products
Register
0
You have 0 item in your basket
VIEW BASKET CHECK OUT
zxmhc6a07t8ta DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, 8-Pin ZXMHC6A07T8TA
zxmhc6a07t8ta DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, 8-Pin ZXMHC6A07T8TA
zxmhc6a07t8ta DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, 8-Pin ZXMHC6A07T8TA

DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, 8-Pin ZXMHC6A07T8TA

DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, 8-Pin ZXMHC6A07T8TA

Manufacturer:
DiodesZetex
Manufacturer Part No:
ZXMHC6A07T8TA
Enrgtech Part No:
ET100211083
Warranty:
Manufacturer
SAR 1.51 SAR 1.51
Checking for live stock
Channel Type:
Type N, Type P
Product Type:
Power MOSFET
Maximum Continuous Drain Current Id:
1.8A
Maximum Drain Source Voltage Vds:
60V
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
425mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
0.85V
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
1.7W
Typical Gate Charge Qg @ Vgs:
3.2nC
Minimum Operating Temperature:
150°C
Maximum Operating Temperature:
-55°C
Transistor Configuration:
Full Bridge
Height:
1.6mm
Width:
3.7 mm
Length:
6.7mm
Standards/Approvals:
J-STD-020, RoHS, AEC-Q101, MIL-STD-202, UL 94V-0
Number of Elements per Chip:
4
Automotive Standard:
No
pdf icon
0900766b814a381e.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
Product Reviews