Infineon IPD Type N-Channel MOSFET, 14.7 A, 600 V Enhancement, 3-Pin TO-252 IPD60R400CEAUMA1

Infineon IPD Type N-Channel MOSFET, 14.7 A, 600 V Enhancement, 3-Pin TO-252 IPD60R400CEAUMA1

Manufacturer:
Manufacturer Part No:
IPD60R400CEAUMA1
Enrgtech Part No:
ET100197097
Warranty:
Manufacturer
SAR 0.65 SAR 0.65
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
14.7A
Maximum Drain Source Voltage Vds:
600V
Series:
IPD
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
400mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
9.4nC
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
0.9V
Maximum Power Dissipation Pd:
41W
Minimum Operating Temperature:
-40°C
Maximum Operating Temperature:
150°C
Height:
2.41mm
Width:
6.22 mm
Standards/Approvals:
No
Length:
6.73mm
Automotive Standard:
No
pdf icon
A700000007497978.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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