Infineon IPN Type N-Channel MOSFET, 6.5 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R750P7SATMA1

Infineon IPN Type N-Channel MOSFET, 6.5 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R750P7SATMA1

Manufacturer:
Manufacturer Part No:
IPN70R750P7SATMA1
Enrgtech Part No:
ET100197081
Warranty:
Manufacturer
SAR 0.34 SAR 0.34
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
6.5A
Maximum Drain Source Voltage Vds:
700V
Package Type:
SOT-223
Series:
IPN
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
750mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
0.9V
Typical Gate Charge Qg @ Vgs:
8.3nC
Minimum Operating Temperature:
-40°C
Maximum Gate Source Voltage Vgs:
30 V
Maximum Power Dissipation Pd:
6.7W
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Length:
6.7mm
Width:
3.7 mm
Height:
1.8mm
Automotive Standard:
No
pdf icon
A700000007498066.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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