Infineon CoolMOS Type N-Channel MOSFET, 70 A, 100 V Enhancement, 3-Pin TO-263 IPB70N10S312ATMA1

Infineon CoolMOS Type N-Channel MOSFET, 70 A, 100 V Enhancement, 3-Pin TO-263 IPB70N10S312ATMA1

Manufacturer:
Manufacturer Part No:
IPB70N10S312ATMA1
Enrgtech Part No:
ET100197037
Warranty:
Manufacturer
SAR 1.42 SAR 1.42
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
70A
Maximum Drain Source Voltage Vds:
100V
Package Type:
TO-263
Series:
CoolMOS
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
11.3mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
F93
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
129W
Forward Voltage Vf:
0.9V
Maximum Operating Temperature:
150°C
Length:
10.31mm
Height:
4.57mm
Width:
4.5 x 3.2 x 1.02mm
Standards/Approvals:
No
Automotive Standard:
AEC-Q101
pdf icon
A700000007497946.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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