Infineon CoolMOS Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-263 IPB65R095C7ATMA2

Infineon CoolMOS Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-263 IPB65R095C7ATMA2

Manufacturer:
Manufacturer Part No:
IPB65R095C7ATMA2
Enrgtech Part No:
ET100197028
Warranty:
Manufacturer
SAR 4.27 SAR 4.27
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
24A
Maximum Drain Source Voltage Vds:
650V
Series:
CoolMOS
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
3-State
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
129W
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
F93
Forward Voltage Vf:
0.9V
Maximum Operating Temperature:
150°C
Length:
10.31mm
Standards/Approvals:
No
Width:
4.5 x 3.2 x 1.02mm
Height:
4.57mm
Automotive Standard:
No
pdf icon
A700000007497838.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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