Infineon HEXFET Type N-Channel MOSFET, 59 A, 55 V Enhancement, 3-Pin TO-252 IRFR2905ZTRPBF

Infineon HEXFET Type N-Channel MOSFET, 59 A, 55 V Enhancement, 3-Pin TO-252 IRFR2905ZTRPBF

Manufacturer:
Manufacturer Part No:
IRFR2905ZTRPBF
Enrgtech Part No:
ET100192482
Warranty:
Manufacturer
SAR 0.62 SAR 0.62
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
59A
Maximum Drain Source Voltage Vds:
55V
Series:
HEXFET
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
14.5mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.3V
Maximum Power Dissipation Pd:
110W
Typical Gate Charge Qg @ Vgs:
29nC
Maximum Operating Temperature:
175°C
Height:
2.39mm
Width:
6.22 mm
Standards/Approvals:
No
Length:
6.73mm
Distrelec Product Id:
304-39-420
Automotive Standard:
No
pdf icon
A700000007497894.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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