Infineon HEXFET Type N-Channel MOSFET, 150 A, 55 V Enhancement, 3-Pin TO-220

Infineon HEXFET Type N-Channel MOSFET, 150 A, 55 V Enhancement, 3-Pin TO-220

Manufacturer:
Manufacturer Part No:
IRF1405ZPBF
Enrgtech Part No:
ET100180731
Warranty:
Manufacturer
SAR 1.85 SAR 1.85
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
150A
Maximum Drain Source Voltage Vds:
55V
Package Type:
TO-220
Series:
HEXFET
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
4.9mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.3V
Maximum Power Dissipation Pd:
230W
Typical Gate Charge Qg @ Vgs:
120nC
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
175°C
Standards/Approvals:
No
Width:
EH Connector Housing
Length:
10.67mm
Height:
16.51mm
Automotive Standard:
No
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Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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