Infineon SIPMOS Type P-Channel MOSFET, 330 mA, 60 V Enhancement, 3-Pin SOT-23

Infineon SIPMOS Type P-Channel MOSFET, 330 mA, 60 V Enhancement, 3-Pin SOT-23

Manufacturer:
Manufacturer Part No:
BSS83PH6327XTSA1
Enrgtech Part No:
ET100180561
Warranty:
Manufacturer
SAR 0.06 SAR 0.06
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Product Type:
MOSFET
Channel Type:
Type P
Maximum Continuous Drain Current Id:
330mA
Maximum Drain Source Voltage Vds:
60V
Package Type:
SOT-23
Series:
499Ω
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
Channel Mode:
Enhancement
Forward Voltage Vf:
-1.1V
Typical Gate Charge Qg @ Vgs:
2.38nC
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
360mW
Maximum Operating Temperature:
150°C
Width:
1.3 mm
Length:
2.9mm
Height:
1mm
Standards/Approvals:
No
Automotive Standard:
AEC-Q101
pdf icon
0900766b810740ec.pdf(datasheets)
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0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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