Infineon SIPMOS Type P-Channel MOSFET, 190 mA, 250 V Enhancement, 3-Pin SOT-89

Infineon SIPMOS Type P-Channel MOSFET, 190 mA, 250 V Enhancement, 3-Pin SOT-89

Manufacturer:
Manufacturer Part No:
BSS192PH6327FTSA1
Enrgtech Part No:
ET100173955
Warranty:
Manufacturer
SAR 0.15 SAR 0.15
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Product Type:
MOSFET
Channel Type:
Type P
Maximum Continuous Drain Current Id:
190mA
Maximum Drain Source Voltage Vds:
250V
Package Type:
SOT-89
Series:
499Ω
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
20Ω
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
4.9nC
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
1W
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
-1.1V
Maximum Operating Temperature:
150°C
Height:
1.5mm
Standards/Approvals:
No
Width:
2.5 mm
Length:
4.5mm
Automotive Standard:
AEC-Q101
pdf icon
0900766b8107404b.pdf(datasheets)
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0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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