Infineon HEXFET Type N-Channel MOSFET, 190 A, 40 V Enhancement, 3-Pin TO-220

Infineon HEXFET Type N-Channel MOSFET, 190 A, 40 V Enhancement, 3-Pin TO-220

Manufacturer:
Manufacturer Part No:
IRF1404ZPBF
Enrgtech Part No:
ET100173911
Warranty:
Manufacturer
SAR 0.72 SAR 0.72
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
190A
Maximum Drain Source Voltage Vds:
40V
Series:
HEXFET
Package Type:
TO-220
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
4mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
100nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
220W
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
175°C
Height:
8.77mm
Length:
10.54mm
Width:
4.69 mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
0900766b80dcacbc.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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