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zxmhc6a07n8tc DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, 8-Pin SOIC ZXMHC6A07N8TC
zxmhc6a07n8tc DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, 8-Pin SOIC ZXMHC6A07N8TC
zxmhc6a07n8tc DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, 8-Pin SOIC ZXMHC6A07N8TC

DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, 8-Pin SOIC ZXMHC6A07N8TC

DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, 8-Pin SOIC ZXMHC6A07N8TC

Manufacturer:
DiodesZetex
Manufacturer Part No:
ZXMHC6A07N8TC
Enrgtech Part No:
ET100162994
Warranty:
Manufacturer
SAR 0.79 SAR 0.79
Checking for live stock
Product Type:
Power MOSFET
Channel Type:
Type N, Type P
Maximum Continuous Drain Current Id:
1.8A
Maximum Drain Source Voltage Vds:
60V
Package Type:
SOIC
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
350mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
3.2nC
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
1.36W
Minimum Operating Temperature:
150°C
Forward Voltage Vf:
0.8V
Maximum Operating Temperature:
-55°C
Transistor Configuration:
Full Bridge
Standards/Approvals:
UL 94V-0, AEC-Q101, J-STD-020, RoHS, MIL-STD-202
Length:
5mm
Width:
4 mm
Height:
1.5mm
Number of Elements per Chip:
4
Automotive Standard:
No
pdf icon
0900766b8104e775.pdf(datasheets)
pdf icon
0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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