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si4599dy-t1-ge3 Vishay Isolated Si4599DY 2 Type N, Type P-Channel MOSFET, 6.8 A, 40 V Enhancement, 8-Pin SOIC SI4599DY-T1-GE3
si4599dy-t1-ge3 Vishay Isolated Si4599DY 2 Type N, Type P-Channel MOSFET, 6.8 A, 40 V Enhancement, 8-Pin SOIC SI4599DY-T1-GE3
si4599dy-t1-ge3 Vishay Isolated Si4599DY 2 Type N, Type P-Channel MOSFET, 6.8 A, 40 V Enhancement, 8-Pin SOIC SI4599DY-T1-GE3

Vishay Isolated Si4599DY 2 Type N, Type P-Channel MOSFET, 6.8 A, 40 V Enhancement, 8-Pin SOIC SI4599DY-T1-GE3

Vishay Isolated Si4599DY 2 Type N, Type P-Channel MOSFET, 6.8 A, 40 V Enhancement, 8-Pin SOIC SI4599DY-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SI4599DY-T1-GE3
Enrgtech Part No:
ET100157685
Warranty:
Manufacturer
SAR 0.61 SAR 0.61
Checking for live stock
Channel Type:
Type N, Type P
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
6.8A
Maximum Drain Source Voltage Vds:
40V
Series:
Si4599DY
Package Type:
SOIC
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
0.045Ω
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
25nC
Maximum Gate Source Voltage Vgs:
±20 V
Maximum Power Dissipation Pd:
3.1W
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.2V
Transistor Configuration:
Isolated
Maximum Operating Temperature:
150°C
Standards/Approvals:
JEDEC JS709A, RoHS
Length:
5mm
Width:
4 mm
Height:
1.55mm
Number of Elements per Chip:
2
Automotive Standard:
No
pdf icon
0900766b81300ca9.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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