si4431cdy-t1-ge3 Vishay Si4431CDY Type P-Channel MOSFET, 7.2 A, 30 V Enhancement, 8-Pin SOIC SI4431CDY-T1-GE3

Vishay Si4431CDY Type P-Channel MOSFET, 7.2 A, 30 V Enhancement, 8-Pin SOIC SI4431CDY-T1-GE3

For more information please check the datasheets.

Vishay Si4431CDY Type P-Channel MOSFET, 7.2 A, 30 V Enhancement, 8-Pin SOIC SI4431CDY-T1-GE3

Manufacturer:

Vishay

Manufacturer Part No:

SI4431CDY-T1-GE3

Enrgtech Part No:

ET100157666

Warranty:

Manufacturer

SAR 0.68

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Product Type:

MOSFET

Channel Type:

Type P

Maximum Continuous Drain Current Id:

7.2A

Maximum Drain Source Voltage Vds:

30V

Series:

Si4431CDY

Package Type:

SOIC

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

49mΩ

Channel Mode:

Enhancement

Maximum Power Dissipation Pd:

4.2W

Maximum Gate Source Voltage Vgs:

20 V

0900766b81300ca6.pdf(datasheets)

0900766b81644fb0.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Vishay Si4431CDY Type P-Channel MOSFET, 7.2 A, 30 V Enhancement, 8-Pin SOIC SI4431CDY-T1-GE3

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