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si4178dy-t1-ge3 Vishay Si4178DY Type N-Channel MOSFET, 12 A, 30 V Enhancement, 8-Pin SOIC SI4178DY-T1-GE3
si4178dy-t1-ge3 Vishay Si4178DY Type N-Channel MOSFET, 12 A, 30 V Enhancement, 8-Pin SOIC SI4178DY-T1-GE3
si4178dy-t1-ge3 Vishay Si4178DY Type N-Channel MOSFET, 12 A, 30 V Enhancement, 8-Pin SOIC SI4178DY-T1-GE3

Vishay Si4178DY Type N-Channel MOSFET, 12 A, 30 V Enhancement, 8-Pin SOIC SI4178DY-T1-GE3

Vishay Si4178DY Type N-Channel MOSFET, 12 A, 30 V Enhancement, 8-Pin SOIC SI4178DY-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SI4178DY-T1-GE3
Enrgtech Part No:
ET100157645
Warranty:
Manufacturer
SAR 0.29 SAR 0.29
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
12A
Maximum Drain Source Voltage Vds:
30V
Package Type:
SOIC
Series:
Si4178DY
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
33mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
7.5nC
Maximum Gate Source Voltage Vgs:
25 V
Maximum Power Dissipation Pd:
5W
Forward Voltage Vf:
0.85V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Height:
1.55mm
Length:
5mm
Width:
4 mm
Automotive Standard:
No
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0900766b81300c9d.pdf(datasheets)
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0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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