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sihb11n80ae-ge3 Vishay E Type N-Channel MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-263 SIHB11N80AE-GE3
sihb11n80ae-ge3 Vishay E Type N-Channel MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-263 SIHB11N80AE-GE3

Vishay E Type N-Channel MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-263 SIHB11N80AE-GE3

Vishay E Type N-Channel MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-263 SIHB11N80AE-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SIHB11N80AE-GE3
Enrgtech Part No:
ET100141079
Warranty:
Manufacturer
SAR 2.19 SAR 2.19
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
8A
Maximum Drain Source Voltage Vds:
800V
Package Type:
TO-263
Series:
E
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
391mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
30 V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
42nC
Forward Voltage Vf:
1.2V
Maximum Power Dissipation Pd:
78W
Maximum Operating Temperature:
150°C
Width:
9.65 mm
Standards/Approvals:
No
Length:
14.61mm
Height:
4.06mm
Automotive Standard:
No
pdf icon
A700000007241984.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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