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sihb17n80ae-ge3 Vishay E Type N-Channel MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-263 SIHB17N80AE-GE3
sihb17n80ae-ge3 Vishay E Type N-Channel MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-263 SIHB17N80AE-GE3

Vishay E Type N-Channel MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-263 SIHB17N80AE-GE3

Vishay E Type N-Channel MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-263 SIHB17N80AE-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SIHB17N80AE-GE3
Enrgtech Part No:
ET100141056
Warranty:
Manufacturer
SAR 1.96 SAR 1.96
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
15A
Maximum Drain Source Voltage Vds:
800V
Series:
E
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
250mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
41nC
Maximum Gate Source Voltage Vgs:
30 V
Maximum Power Dissipation Pd:
179W
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
150°C
Height:
4.06mm
Standards/Approvals:
No
Width:
9.65 mm
Length:
14.61mm
Automotive Standard:
No
pdf icon
A700000007242056.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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