Vishay EF Type N-Channel MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-263 SiHB186N60EF-GE3

Vishay EF Type N-Channel MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-263 SiHB186N60EF-GE3

Manufacturer:
Manufacturer Part No:
SiHB186N60EF-GE3
Enrgtech Part No:
ET100141043
Warranty:
Manufacturer
SAR 2.97 SAR 2.97
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
8.4A
Maximum Drain Source Voltage Vds:
600V
Package Type:
TO-263
Series:
EF
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
168mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
30 V
Maximum Power Dissipation Pd:
156W
Typical Gate Charge Qg @ Vgs:
21nC
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
150°C
Length:
14.61mm
Standards/Approvals:
No
Height:
4.06mm
Width:
9.65 mm
Automotive Standard:
No
pdf icon
A700000007241944.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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