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sihd11n80ae-ge3 Vishay E Type N-Channel MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-252 SIHD11N80AE-GE3
sihd11n80ae-ge3 Vishay E Type N-Channel MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-252 SIHD11N80AE-GE3

Vishay E Type N-Channel MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-252 SIHD11N80AE-GE3

Vishay E Type N-Channel MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-252 SIHD11N80AE-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SIHD11N80AE-GE3
Enrgtech Part No:
ET100141034
Warranty:
Manufacturer
SAR 0.82 SAR 0.82
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
8A
Maximum Drain Source Voltage Vds:
800V
Series:
E
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
391mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
78W
Maximum Gate Source Voltage Vgs:
30 V
Forward Voltage Vf:
1.2V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
28nC
Maximum Operating Temperature:
150°C
Length:
9.4mm
Standards/Approvals:
No
Height:
2.2mm
Width:
6.4 mm
Automotive Standard:
No
pdf icon
A700000007241988.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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