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sihu2n80ae-ge3 Vishay E Type N-Channel MOSFET, 2.9 A, 800 V Enhancement, 3-Pin IPAK SIHU2N80AE-GE3
sihu2n80ae-ge3 Vishay E Type N-Channel MOSFET, 2.9 A, 800 V Enhancement, 3-Pin IPAK SIHU2N80AE-GE3

Vishay E Type N-Channel MOSFET, 2.9 A, 800 V Enhancement, 3-Pin IPAK SIHU2N80AE-GE3

Vishay E Type N-Channel MOSFET, 2.9 A, 800 V Enhancement, 3-Pin IPAK SIHU2N80AE-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SIHU2N80AE-GE3
Enrgtech Part No:
ET100140889
Warranty:
Manufacturer
SAR 0.25 SAR 0.25
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
2.9A
Maximum Drain Source Voltage Vds:
800V
Series:
E
Package Type:
IPAK
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
2.5Ω
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
62.5W
Typical Gate Charge Qg @ Vgs:
± 20%
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
30 V
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Height:
2.18mm
Width:
6.22 mm
Length:
6.73mm
Automotive Standard:
No
pdf icon
A700000007242072.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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