Infineon CoolMOS P7 Type N-Channel MOSFET, 386 A, 650 V Enhancement, 3-Pin TO-247 IPW60R024P7XKSA1

Infineon CoolMOS P7 Type N-Channel MOSFET, 386 A, 650 V Enhancement, 3-Pin TO-247 IPW60R024P7XKSA1

Manufacturer:
Manufacturer Part No:
IPW60R024P7XKSA1
Enrgtech Part No:
ET100123967
Warranty:
Manufacturer
SAR 8.80 SAR 8.80
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
386A
Maximum Drain Source Voltage Vds:
650V
Package Type:
TO-247
Series:
CoolMOS P7
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
24mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
164nC
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
291W
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
0.9V
Maximum Operating Temperature:
150°C
Height:
5.21mm
Standards/Approvals:
No
Width:
21.1 mm
Length:
31.5 x 22 x 36.5mm
Automotive Standard:
No
pdf icon
A700000008175398.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



Product Reviews