Vishay SIRS Type N-Channel MOSFET, 265 A, 80 V Enhancement, 8-Pin SO-8 SIRS5800DP-T1-GE3

For more information please check the datasheets.

Vishay SIRS Type N-Channel MOSFET, 265 A, 80 V Enhancement, 8-Pin SO-8 SIRS5800DP-T1-GE3

Manufacturer:

Vishay

Manufacturer Part No:

SIRS5800DP-T1-GE3

Enrgtech Part No:

ET100109278

Warranty:

Manufacturer

SAR 3.13

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Channel Type:

Type N

Product Type:

MOSFET

Maximum Continuous Drain Current Id:

265A

Maximum Drain Source Voltage Vds:

80V

Series:

SIRS

Package Type:

SO-8

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

0.0018Ω

Channel Mode:

Enhancement

Typical Gate Charge Qg @ Vgs:

122nC

Maximum Power Dissipation Pd:

240W

A700000010766961.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Vishay SIRS Type N-Channel MOSFET, 265 A, 80 V Enhancement, 8-Pin SO-8 SIRS5800DP-T1-GE3

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