Vishay SiR692DP Type N-Channel MOSFET, 24.2 A, 250 V Enhancement, 8-Pin SO-8 SIR692DP-T1-RE3

Vishay SiR692DP Type N-Channel MOSFET, 24.2 A, 250 V Enhancement, 8-Pin SO-8 SIR692DP-T1-RE3

Manufacturer:
Manufacturer Part No:
SIR692DP-T1-RE3
Enrgtech Part No:
ET100105735
Warranty:
Manufacturer
SAR 1.42 SAR 1.42
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
24.2A
Maximum Drain Source Voltage Vds:
250V
Package Type:
SO-8
Series:
SiR692DP
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
67mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
25.3nC
Forward Voltage Vf:
1.1V
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
104W
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
150°C
Length:
6.25mm
Width:
5.26 mm
Standards/Approvals:
No
Height:
1.12mm
Automotive Standard:
No
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0900766b815a7420.pdf(datasheets)
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0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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