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sira90dp-t1-re3 Vishay TrenchFET Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8 SIRA90DP-T1-RE3
sira90dp-t1-re3 Vishay TrenchFET Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8 SIRA90DP-T1-RE3

Vishay TrenchFET Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8 SIRA90DP-T1-RE3

Vishay TrenchFET Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8 SIRA90DP-T1-RE3

Manufacturer:
Vishay
Manufacturer Part No:
SIRA90DP-T1-RE3
Enrgtech Part No:
ET100105627
Warranty:
Manufacturer
SAR 1.17 SAR 1.17
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
100A
Maximum Drain Source Voltage Vds:
30V
Series:
TrenchFET
Package Type:
SO-8
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
1.15mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
102nC
Forward Voltage Vf:
1.1V
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
104W
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Height:
1.12mm
Width:
5.26 mm
Standards/Approvals:
No
Length:
6.25mm
Automotive Standard:
No
pdf icon
0900766b815a7424.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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