Infineon Half Bridge OptiMOS-TM6 Type N-Channel Power MOSFET, 60 A, 40 V N, 8-Pin SuperSO8 5 x 6 IAUC60N04S6L030HATMA1

For more information please check the datasheets.

Infineon Half Bridge OptiMOS-TM6 Type N-Channel Power MOSFET, 60 A, 40 V N, 8-Pin SuperSO8 5 x 6 IAUC60N04S6L030HATMA1

Manufacturer:

Infineon

Manufacturer Part No:

IAUC60N04S6L030HATMA1

Enrgtech Part No:

ET100104710

Warranty:

Manufacturer

SAR 0.93

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Product Type:

Power MOSFET

Channel Type:

Type N

Maximum Continuous Drain Current Id:

60A

Maximum Drain Source Voltage Vds:

40V

Package Type:

SuperSO8 5 x 6

Series:

OptiMOS-TM6

Pin Count:

Maximum Drain Source Resistance Rds:

3mΩ

Channel Mode:

Minimum Operating Temperature:

-55°C

Maximum Gate Source Voltage Vgs:

16 V

Forward Voltage Vf:

1.1V

A700000009015660.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon Half Bridge OptiMOS-TM6 Type N-Channel Power MOSFET, 60 A, 40 V N, 8-Pin SuperSO8 5 x 6 IAUC60N04S6L030HATMA1

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