Infineon Half Bridge OptiMOS-TM6 Type N-Channel Power MOSFET, 60 A, 40 V Enhancement, 8-Pin SuperSO8 5 x 6

For more information please check the datasheets.

Infineon Half Bridge OptiMOS-TM6 Type N-Channel Power MOSFET, 60 A, 40 V Enhancement, 8-Pin SuperSO8 5 x 6

Manufacturer:

Infineon

Manufacturer Part No:

IAUC60N04S6N031HATMA1

Enrgtech Part No:

ET100104490

Warranty:

Manufacturer

SAR 1.12

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Product Type:

Power MOSFET

Channel Type:

Type N

Maximum Continuous Drain Current Id:

60A

Maximum Drain Source Voltage Vds:

40V

Package Type:

SuperSO8 5 x 6

Series:

OptiMOS-TM6

Pin Count:

Channel Mode:

Enhancement

Forward Voltage Vf:

1.1V

Typical Gate Charge Qg @ Vgs:

3.2 x 4.5mm

Maximum Power Dissipation Pd:

75W

Maximum Gate Source Voltage Vgs:

20 V

A700000009016757.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon Half Bridge OptiMOS-TM6 Type N-Channel Power MOSFET, 60 A, 40 V Enhancement, 8-Pin SuperSO8 5 x 6

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