Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 2 Type N-Channel MOSFET, 20 A, 60 V N, 8-Pin SuperSO8

For more information please check the datasheets.

Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 2 Type N-Channel MOSFET, 20 A, 60 V N, 8-Pin SuperSO8

Manufacturer:

Infineon

Manufacturer Part No:

IPG20N06S4L26ATMA1

Enrgtech Part No:

ET100104377

Warranty:

Manufacturer

SAR 0.67

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Channel Type:

Type N

Product Type:

MOSFET

Maximum Continuous Drain Current Id:

20A

Maximum Drain Source Voltage Vds:

60V

Package Type:

SuperSO8 5 x 6

Series:

OptiMOSTM-T2

Pin Count:

Channel Mode:

Minimum Operating Temperature:

-55°C

Forward Voltage Vf:

1.3V

Maximum Power Dissipation Pd:

33W

Maximum Gate Source Voltage Vgs:

±16 V

A700000009016809.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 2 Type N-Channel MOSFET, 20 A, 60 V N, 8-Pin SuperSO8

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