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ipb35n10s3l26atma1 Infineon iPB Type N-Channel MOSFET, 35 A, 100 V Enhancement, 3-Pin TO-263 IPB35N10S3L26ATMA1
ipb35n10s3l26atma1 Infineon iPB Type N-Channel MOSFET, 35 A, 100 V Enhancement, 3-Pin TO-263 IPB35N10S3L26ATMA1

Infineon iPB Type N-Channel MOSFET, 35 A, 100 V Enhancement, 3-Pin TO-263 IPB35N10S3L26ATMA1

Infineon iPB Type N-Channel MOSFET, 35 A, 100 V Enhancement, 3-Pin TO-263 IPB35N10S3L26ATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPB35N10S3L26ATMA1
Enrgtech Part No:
ET100104329
Warranty:
Manufacturer
SAR 1.84 SAR 1.84
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
35A
Maximum Drain Source Voltage Vds:
100V
Package Type:
TO-263
Series:
iPB
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
1.7mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
81W
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
80nC
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
175°C
Standards/Approvals:
RoHS
Automotive Standard:
AEC-Q101
pdf icon
A700000009016777.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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