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ipt030n12n3gatma1 Infineon OptiMOS™ Type N-Channel MOSFET, 237 A, 120 V, 8-Pin HSOF-8 IPT030N12N3GATMA1
ipt030n12n3gatma1 Infineon OptiMOS™ Type N-Channel MOSFET, 237 A, 120 V, 8-Pin HSOF-8 IPT030N12N3GATMA1

Infineon OptiMOS™ Type N-Channel MOSFET, 237 A, 120 V, 8-Pin HSOF-8 IPT030N12N3GATMA1

Infineon OptiMOS™ Type N-Channel MOSFET, 237 A, 120 V, 8-Pin HSOF-8 IPT030N12N3GATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPT030N12N3GATMA1
Enrgtech Part No:
ET100057964
Warranty:
Manufacturer
SAR 4.21 SAR 4.21
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
237A
Maximum Drain Source Voltage Vds:
120V
Series:
OptiMOS™
Package Type:
HSOF-8
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
3mΩ
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
375W
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
158nC
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
175°C
Length:
10.1mm
Width:
10.58 mm
Standards/Approvals:
No
Height:
2.4mm
Automotive Standard:
No
pdf icon
A700000008424289.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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