Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-247 IRFP064NPBF

Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-247 IRFP064NPBF

Manufacturer:
Manufacturer Part No:
IRFP064NPBF
Enrgtech Part No:
ET100057951
Warranty:
Manufacturer
SAR 2.45 SAR 2.45
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
110A
Maximum Drain Source Voltage Vds:
55V
Package Type:
TO-247
Series:
HEXFET
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
8mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
8 Kbyte
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
200W
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
175°C
Width:
5.3 mm
Standards/Approvals:
No
Height:
20.3mm
Length:
15.9mm
Automotive Standard:
No
Distrelec Product Id:
30341342
pdf icon
0900766b80791207.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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