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si3476dv-t1-ge3 Vishay N-Channel MOSFET, 4.6 A, 80 V, 6-Pin SOT-23 SI3476DV-T1-GE3
si3476dv-t1-ge3 Vishay N-Channel MOSFET, 4.6 A, 80 V, 6-Pin SOT-23 SI3476DV-T1-GE3

Vishay N-Channel MOSFET, 4.6 A, 80 V, 6-Pin SOT-23 SI3476DV-T1-GE3

Vishay N-Channel MOSFET, 4.6 A, 80 V, 6-Pin SOT-23 SI3476DV-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SI3476DV-T1-GE3
Enrgtech Part No:
ET100034073
Warranty:
Manufacturer
SAR 1.90
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
4.6 A
Maximum Drain Source Voltage:
80 V
Package Type:
SOT-23
Mounting Type:
Surface Mount
Pin Count:
6
Maximum Drain Source Resistance:
126 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
3V
Minimum Gate Threshold Voltage:
1.2V
Maximum Power Dissipation:
3.6 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
±20 V
Typical Gate Charge @ Vgs:
4.9 nC @ 10 V
Number of Elements per Chip:
1
Length:
3.1mm
Width:
1.7mm
Maximum Operating Temperature:
+150 °C
Minimum Operating Temperature:
-55 °C
Height:
1mm
pdf icon
0900766b8161c963.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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